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| STB7102, STB7103, STB7104 0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS PRELIMINARY DATA FEATURES STB710X FAMILY * OPERATING FREQUENCY 100-2500MHz * EXCELLENT ISOLATION * LOW CURRENT CONSUMPTION * ULTRA MINIATURE SOT323-6L PACKAGE (1.15 x 1.8 x 0.8 mm) SOT323-6L (SC70) STB7102 * HIGH ISOLATION (45 dB @ 950 MHz) STB7103 * HIGH LINEARITY (P1 dB OUTPUT = +1.5 dBm) STB7104 * LOW CURRENT CONSUMPTION (2.8 mA) ORDERING INFORMATION P/N STB7102 STB7103 STB7104 ORDER CODE STB7102TR TBD TBD MARKING 102 103 104 DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current consumption. These low current amplifiers operate on 3.0 V. The STB710x family is housed in an ultra miniature package SOT323-6L surface mount package. SOT323-6L dimensions are 1.15mmx1.8mm with 0.8 mm thickness. APPLICATION UHF BUFFER AMPLIFIER for Mobile Phone Application (0.1/2.5GHz) ABSOLUTE MAXIMUM RATINGS Symbol Vcc Tstg Ta Parameter Supply voltage Storage temperature Operating ambient temperature Conditions Value 3.3 -40 to +100 -30 to +85 Unit V o C oC June, 17 2002 1/10 STB7102, STB7103, STB7104 PIN CONNECTION Pin No. Pin Name INPUT GND GND OUTPUT GND VCC (Top View) 3 2 1 4 5 6 (Bottom View) 4 5 6 3 2 1 1 2 3 4 5 6 PRODUCT LINE-UP Part Number STB7102 STB7103 STB7104 Icc (mA) Gp at 1dB (dB) 4.3 4.1 2.8 15.5 17.5 17 950 MHz output port matching frequency ISL (dB) 45 45 45 P1dBout (dBm) 0 1.5 -0.25 Example of a digital cellular phone (Receiver and Transmission section) Receiver section SAW Filter RF Mixer IF Filter AGC IF Amp IQ Demodulator LNA I Duplexer X X Q ADC ADC X Lo Buffer Amplifier IF Buffer RF PLL IF PLL Transmission section PA AGC RF Filter RF Mixer IF Amp IF Filter IQ Modulator Duplexer X X I DAC X Lo Buffer Amplifier IF Buffer Q DAC RF PLL IF PLL These ICs can be added to your system around parts, when you need more isolation or gain. The application showed above is only an example therefore it can depend on your kit evaluation. 2/10 STB7102, STB7103, STB7104 ELECTRICAL CHARACTERISTICS (Ta = +25 oC, Vcc = 3V, Zs = ZL = 50, unless otherwise specified) Symbol Icc P1dB GP NF ISL RLin RLout (1) (2) Parameters Circuit Current Output Power at 1dB Compression Point Gain at 1dB Compression Point Noise Figure Isolation Input Return Loss Output Return Loss Test Conditions f = 950 MHz f = 950 MHz f = 950 MHz f = 950 MHz f = 950 MHz f = 950 MHz f = 950 MHz STB7102 (1) Min 3.3 Typ 4.3 0 15.5 3 45 8 20 Max 5.3 STB7103 (2) Min 3.3 Typ 4.1 1.5 17.5 2.85 45 10 7 Max 4.9 STB7104 (2) Min 2.2 Typ 2.8 -0.25 17 3.3 45 7 7 Max 3.4 Unit mA dBm dB dB dB dB dB STB7102 data are measured in TEST CIRCUIT showed in page 5 STB7103 and STB7104 data are measured in TEST CIRCUIT showed in page 8 3/10 STB7102, STB7103, STB7104 TYPICAL PERFORMANCE (STB7102) Power Gain vs. Frequency 18 Reverse Isolation vs. Frequency 0 16 -1 0 14 Gp (dB) -2 0 ISL (dB) 12 -3 0 10 -4 0 8 -5 0 6 800 850 900 950 1000 1050 1100 1150 1200 f (MHz ) -6 0 8 00 850 900 9 50 100 0 f (MHz) 1 050 11 00 115 0 1 200 Input Return Loss vs. Frequency 0 Output Return Loss vs. Frequency 0 -5 -1 0 -10 -2 0 IRL (dB) ORL (dB) -15 -3 0 -20 -4 0 -25 -30 -5 0 -35 800 850 900 950 1000 f (Mhz ) 1050 1100 1150 1200 -6 0 800 850 900 950 1000 f (Mh z) 1 05 0 11 0 0 1150 1200 Noise Figure vs. Frequency 4.5 4 3.5 3 Output Power @ 1dB compression point 18 17 16 Gp (dB) NF (dB) 2.5 P1dBcp -0.1 dBm 15 2 1.5 1 0.5 0 80 0 14 13 85 0 90 0 95 0 1 000 f (Mhz) 1 050 1 100 1 150 1200 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 Pout (dBm ) 4/10 STB7102, STB7103, STB7104 STB7102 TEST CIRCUIT 1 2 3 4 C8 1.5pF L2 2n2 J2 RF OUT 3 C1 33pF 2 1 J1 RF IN GND GND INPUT OUT GND VCC Title Size A4 Date: File: 4 5 6 L3 10nH JP1 VCC L4 5n6 L1 33nH 1 2 C5 Number 10nF C3 33pF C2 1uFRevision 17-Jun-2002 Sheet of C:\PROGETTI\LOBUFFER_Uloba\uloba.ddb Drawn By: 3 4 1 2 5/10 STB7102, STB7103, STB7104 TYPICAL PERFORMANCE (STB7103) Power Gain vs. Frequency 20 18 16 -2 0 Reverse Isolation vs. Frequency 0 -1 0 14 12 Gp (dB) 10 8 -5 0 ISL (dB) -3 0 -4 0 6 -6 0 4 2 0 800 850 900 950 1000 1050 1100 1150 1200 f (MHz ) -7 0 -8 0 800 850 900 950 1000 f (MHZ) 1050 11 0 0 1150 12 0 0 Input Return Loss vs. Frequency 0 Output Return Loss vs. Frequency 10 -5 5 0 -1 0 -5 ORL (dB) IRL (dB) -1 5 -1 0 -2 0 -1 5 -2 5 -2 0 -3 0 -2 5 -3 5 800 850 900 950 1000 f (Mh z) 1050 1100 1150 1200 -3 0 800 850 900 9 50 1000 f (Mh z) 1050 1100 1 150 1200 Noise Figure vs. Frequency 4 Output Power @ 1dB compression point 20 3 .5 19 3 18 Gp (dB) NF (dB) 2 .5 P 1dB c p + 1.5 4 dB m 17 2 16 1 .5 1 800 15 850 900 950 1000 f (Mh z) 1050 1100 1150 1200 -11 -1 0 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 Pout (d Bm ) 6/10 STB7102, STB7103, STB7104 TYPICAL PERFORMANCE (STB7104) Power Gain vs. Frequency 20 18 -1 0 Reverse Isolation vs. Frequency 0 16 -2 0 14 12 10 8 6 -6 0 ISL (dB) -3 0 Gp (dB) -4 0 -5 0 4 2 0 80 0 -7 0 850 900 950 1000 1 0 50 1100 1150 1200 -8 0 8 00 8 50 90 0 95 0 1 0 00 f (MHz) 10 5 0 1 10 0 1 1 50 12 0 0 f (MHz) Input Return Loss vs. Frequency 0 Output Return Loss vs. Frequency 10 -5 5 -10 0 -5 IRL (dB) ORL (dB) -15 -10 -20 -15 -25 -20 -30 -25 -35 80 0 850 9 00 9 50 10 00 f (MHz) 1 0 50 1 10 0 1 15 0 12 0 0 -30 80 0 8 50 90 0 95 0 1 00 0 f (MHz) 10 5 0 11 00 1 15 0 12 0 0 Noise Figure vs. Frequency 5 Output Power @ 1dB compression point 20 4 .5 19 4 18 NF (dB) 3 .5 Gp (dB) 17 3 P1dBc p -0.25 dBm 2 .5 16 2 800 15 85 0 900 95 0 1000 f (MHz) 1 05 0 1100 1 15 0 1200 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 Pout (dB m ) 7/10 STB7102, STB7103, STB7104 STB7103 / STB7104 TEST CIRCUIT 1 2 3 4 D C8 1pF J2 RF OUT 3 C1 C J1 RF IN 33pF L 15nH 1 2 GND GND INPUT OUT GND VCC 4 5 6 L3 10nH JP1 VCC L1 33nH 1 2 B C5 10nF C3 33pF C2 1uF Title Size A4 A Date: 17-Jun-2002 Sheet of Number Revisi 8/10 STB7102, STB7103, STB7104 SOT323-6L MECHANICAL DATA mm Inch MAX 1.1 0.1 1 0.3 0.18 2.2 1.35 0.65 1.8 0.1 2.4 0.4 0.071 0.004 MIN. 0.031 0 0.0031 0.006 0.004 0.071 0.045 0.025 0.094 0.016 TYP. MAX 0.043 0.004 0.039 0.012 0.007 0.088 0.59 DIM. A A1 A2 b c D E e H Q MIN. 0.8 0 0.8 0.15 0.1 1.8 1.15 TYP. 9/10 STB7102, STB7103, STB7104 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 10/10 |
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